منابع مشابه
Confocal microscopy using an InGaN violet laser diode at 406nm.
We report on the application of a novel all-solid-state violet laser diode source to confocal microscopy. The source has the potential to replace argon ion lasers in a range of fluorescence based imaging systems. Improvements in system performance and image quality through the use of anamorphic prisms to modify the beam profile have been characterised. These modifications have permitted high qu...
متن کاملHigh-Power Pure Blue InGaN Laser Diodes
We fabricated high-power pure blue laser diodes (LDs) by using GaN-based material for full-color laser display. The operating output power, voltage and wall-plug efficiency of the LDs at forward current of 1.0 A were 1.17 W, 4.81 V and 24.3%, respectively. The estimated lifetime of the LDs was over 30,000 hours under continuous-wave operation. key words: InGaN, GaN, high-power laser, blue LD
متن کاملTreatment of lentigines by a novel high power diode laser at 755 nm: a case report
The use of high-power diode laser with a wavelength of 755 nm is an effective and safe method for the correction and partial and/or total elimination of pigmented lesions, specifically solar lentigines. This wavelength has yet not been used in diode lasers to treat solar lentigines. Side effects are the usual ones, including darkening and scab formation. Our patient was a 40-year-old woman of C...
متن کاملAnalysis of violet-excited fluorochromes by flow cytometry using a violet laser diode.
BACKGROUND Low power violet laser diodes (VLDs) have been evaluated as potential replacements for water-cooled argon-ion and krypton-ion ultraviolet and violet lasers for DNA content analysis using the Hoechst dyes and 4,6-diamidino-2-phenylindole (Shapiro HMN, Perlmutter NG: Cytometry 44:133-136, 2001). In this study, we used a VLD to excite a variety of violet-excited fluorescent molecules im...
متن کاملHigh power diode pumped Yb 3 + : CaGdAlO 4 laser
Yb:CaGdAlO4 [1] has been recently demonstrated to be very interesting for the development of next generation diode–pumped short-pulsed modelocked lasers. In fact, this crystal demonstrated two very promising properties. First, it has, to our best knowledge, the broadest and the flattest emission band of the Yb:doped materials. This allowed the generation of 47 fs pulses at a low average power o...
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ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 2000
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.28.581